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The global Gallium Arsenide (GaAs) Substrates market was valued at US$ 2.8 billion in 2023 and is projected to reach US$ 3.4 billion by 2030, at a CAGR of 2.6% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

This report studies the Gallium Arsenide (GaAs) Substrates market, covering market size for segment by type (LEC Grown GaAs, VGF Grown GaAs, etc.), by application (Wireless Communication, Optoelectronic Devices, etc.), by sales channel (Direct Channel, Distribution Channel), by player (Freiberger Compound Materials, AXT, Sumitomo Electric, China Crystal Technologies, Shenzhou Crystal Technology, etc.) and by region (North America, Europe, Asia-Pacific, South America and Middle East & Africa).

This report provides detailed historical analysis of global market for Gallium Arsenide (GaAs) Substrates from 2018-2023, and provides extensive market forecasts from 2024-2032 by region/country and subsectors. It covers the sales/revenue/value, gross margin, historical growth and future perspectives in the Gallium Arsenide (GaAs) Substrates market.

Leading Players of Gallium Arsenide (GaAs) Substrates including:

• Freiberger Compound Materials
• AXT
• Sumitomo Electric
• China Crystal Technologies
• Shenzhou Crystal Technology
• Tianjin Jingming Electronic Materials
• Yunnan Germanium
• DOWA Electronics Materials
• II-VI Incorporated
• IQE Corporation

Market split by Type:

• LEC Grown GaAs
• VGF Grown GaAs

Market split by Application:

• Wireless Communication
• Optoelectronic Devices

Market split by Sales Channel:

• Direct Channel
• Distribution Channel

Market split by Region/Country:

• North America (United States and Canada)
• Europe (Germany, UK, France, Italy, Spain, and Russia, etc.)
• Asia-Pacific (China, Japan, Korea, India, Australia, and Southeast Asia, etc.)
• South America (Brazil, Mexico, and Argentina, etc.)
• Middle East & Africa (Turkey, UAE, Saudi Arabia, and South Africa, etc.)

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