Report overview
This report aims to provide a comprehensive presentation of the global market for Silicon Carbide Discrete Devices, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Silicon Carbide Discrete Devices. This report contains market size and forecasts of Silicon Carbide Discrete Devices in global, including the following market information:
Global Silicon Carbide Discrete Devices Market Revenue, 2018-2023, 2024-2032, ($ millions)
Global Silicon Carbide Discrete Devices Market Sales, 2018-2023, 2024-2032, (K Units)
Global top five Silicon Carbide Discrete Devices companies in 2022 (%)
The global Silicon Carbide Discrete Devices market was valued at US$ million in 2022 and is projected to reach US$ million by 2029, at a CAGR of % during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million.
SiC MOSFET Segment to Reach $ Million by 2029, with a % CAGR in next six years.
The global key manufacturers of Silicon Carbide Discrete Devices include Infineon Technologies AG, Cree Inc. (Wolfspeed), Rohm Semiconductor, Stmicroelectronics N.V., Fuji Electric Co., Ltd., On Semiconductor, General Electric, United Silicon Carbide, Inc. and Genesic Semiconductor Inc., etc. in 2022, the global top five players have a share approximately % in terms of revenue.
We surveyed the Silicon Carbide Discrete Devices manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global Silicon Carbide Discrete Devices Market, by Type, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Silicon Carbide Discrete Devices Market Segment Percentages, by Type, 2022 (%)
SiC MOSFET
SiC Diode
SIC Module
Global Silicon Carbide Discrete Devices Market, by Application, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Silicon Carbide Discrete Devices Market Segment Percentages, by Application, 2022 (%)
Lighting Control
Industrial Motor Drive
Flame Detector
EV Motor Drive
EV Charging
Electronic Combat System
Wind Energy
Solar Energy
Others
Global Silicon Carbide Discrete Devices Market, By Region and Country, 2018-2023, 2024-2032 ($ Millions) & (K Units)
Global Silicon Carbide Discrete Devices Market Segment Percentages, By Region and Country, 2022 (%)
North America
US
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Nordic Countries
Benelux
Rest of Europe
Asia
China
Japan
South Korea
Southeast Asia
India
Rest of Asia
South America
Brazil
Argentina
Rest of South America
Middle East & Africa
Turkey
Israel
Saudi Arabia
UAE
Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
Key companies Silicon Carbide Discrete Devices revenues in global market, 2018-2023 (Estimated), ($ millions)
Key companies Silicon Carbide Discrete Devices revenues share in global market, 2022 (%)
Key companies Silicon Carbide Discrete Devices sales in global market, 2018-2023 (Estimated), (K Units)
Key companies Silicon Carbide Discrete Devices sales share in global market, 2022 (%)
Further, the report presents profiles of competitors in the market, key players include:
Infineon Technologies AG
Cree Inc. (Wolfspeed)
Rohm Semiconductor
Stmicroelectronics N.V.
Fuji Electric Co., Ltd.
On Semiconductor
General Electric
United Silicon Carbide, Inc.
Genesic Semiconductor Inc.
Renesas Electronics Corporation
Monolith Semiconductor Inc.
Ascatron AB
Pilegrowth Tech S.R.L.
Outline of Major Chapters:
Chapter 1: Introduces the definition of Silicon Carbide Discrete Devices, market overview.
Chapter 2: Global Silicon Carbide Discrete Devices market size in revenue and volume.
Chapter 3: Detailed analysis of Silicon Carbide Discrete Devices manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales of Silicon Carbide Discrete Devices in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Global Silicon Carbide Discrete Devices capacity by region & country.
Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 11: The main points and conclusions of the report.
