This report aims to provide a comprehensive presentation of the global market for High Voltage Discrete SiC-MOSFET, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding High Voltage Discrete SiC-MOSFET. This report contains market size and forecasts of High Voltage Discrete SiC-MOSFET in global, including the following market information:
- Global High Voltage Discrete SiC-MOSFET Market Revenue, 2018-2023, 2024-2030, ($ millions)
- Global High Voltage Discrete SiC-MOSFET Market Sales, 2018-2023, 2024-2030, (K Units)
Global top five High Voltage Discrete SiC-MOSFET companies in 2022 (%)
The global High Voltage Discrete SiC-MOSFET market was valued at US$ million in 2022 and is projected to reach US$ million by 2030, at a CAGR of % during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
The U.S. Market is Estimated at $ Million in 2022, While China is Forecast to Reach $ Million.
Below 650 V Segment to Reach $ Million by 2030, with a % CAGR in next six years.
The global key manufacturers of High Voltage Discrete SiC-MOSFET include ROHM, Wolfspeed, Mitsubishi Electric, STMicroelectronics, Infineon Technologies, Littelfuse, Ascatron, Fuji Electric Co., Ltd. and Toshiba, etc. in 2022, the global top five players have a share approximately % in terms of revenue.
We surveyed the High Voltage Discrete SiC-MOSFET manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global High Voltage Discrete SiC-MOSFET Market, by Type, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global High Voltage Discrete SiC-MOSFET Market Segment Percentages, by Type, 2022 (%)
- Below 650 V
- 650-1200 V
- 1200-1700 V
- Above 1700V
Global High Voltage Discrete SiC-MOSFET Market, by Application, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global High Voltage Discrete SiC-MOSFET Market Segment Percentages, by Application, 2022 (%)
- Rail
- Automotive
- Smart Grid
- Communication Power
- Others
Global High Voltage Discrete SiC-MOSFET Market, By Region and Country, 2018-2023, 2024-2030 ($ Millions) & (K Units)
Global High Voltage Discrete SiC-MOSFET Market Segment Percentages, By Region and Country, 2022 (%)
- North America
- US
- Canada
- Mexico
- Europe
- Germany
- France
- U.K.
- Italy
- Russia
- Nordic Countries
- Benelux
- Rest of Europe
- Asia
- China
- Japan
- South Korea
- Southeast Asia
- India
- Rest of Asia
- South America
- Brazil
- Argentina
- Rest of South America
- Middle East & Africa
- Turkey
- Israel
- Saudi Arabia
- UAE
- Rest of Middle East & Africa
Competitor Analysis
The report also provides analysis of leading market participants including:
- Key companies High Voltage Discrete SiC-MOSFET revenues in global market, 2018-2023 (Estimated), ($ millions)
- Key companies High Voltage Discrete SiC-MOSFET revenues share in global market, 2022 (%)
- Key companies High Voltage Discrete SiC-MOSFET sales in global market, 2018-2023 (Estimated), (K Units)
- Key companies High Voltage Discrete SiC-MOSFET sales share in global market, 2022 (%)
- Further, the report presents profiles of competitors in the market, key players include:
- ROHM
- Wolfspeed
- Mitsubishi Electric
- STMicroelectronics
- Infineon Technologies
- Littelfuse
- Ascatron
- Fuji Electric Co., Ltd.
- Toshiba
- MicroSemi (Microchip)
- GeneSiC Semiconductor Inc.
- Global Power Technology Co., Ltd., Inc.
- Shenzhen BASiC Semiconductor LTD.
- InventChip Technology Co., Ltd.
- ON Semiconductor
- Vishay
- Alpha & Omega Semiconductor
- Outline of Major Chapters:
- Chapter 1: Introduces the definition of High Voltage Discrete SiC-MOSFET, market overview.
- Chapter 2: Global High Voltage Discrete SiC-MOSFET market size in revenue and volume.
- Chapter 3: Detailed analysis of High Voltage Discrete SiC-MOSFET manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
- Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
- Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
- Chapter 6: Sales of High Voltage Discrete SiC-MOSFET in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
- Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
- Chapter 8: Global High Voltage Discrete SiC-MOSFET capacity by region & country.
- Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
- Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
- Chapter 11: The main points and conclusions of the report.
