Silicon Carbide (SiC) Substrate market is segmented by Type and by Application. Players, stakeholders, and other participants in the global Silicon Carbide (SiC) Substrate market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
by Grade
Ultra Grade
Production Grade
Research Grade
Dummy Grade
by Product Type
6H SiC
4H SiC
3H SiC
Segment by Application
IT
LED Lighting
Automotive
Industry
Consumer
Others
By Company
Cree (Wolfspeed)
II?VI Advanced Materials
ROHM Semiconductor
Nippon Steel Corporation
Dow
SICC Materials
TankeBlue Semiconductor
Norstel
Shandong Tianyue
Tianke Heda
Tongguang Crystal
Zhongke Energy Saving
Production by Region
North America
Europe
China
Japan
South Korea
Taiwan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE
