Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market is segmented by Type and by Application. Players, stakeholders, and other participants in the global Gallium Nitride (GaN) Hi-Frequncy Substrate (for 5G Communacation) market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
4H-SiC Substrate
6H-SiC Substrate
GaN-on-Si Substrate
Segment by Application
Consumer Electronics
Communication
By Company
Cree Inc.
Mitsubishi Chemical
Kyocera Corporation
Plessey Semiconductors
IQE lpc
MonoCrystal
Sumco Corp
Sumitomo Electric Industries, Ltd
Hitachi Metals Ltd
DowCorning
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE
