Silicon Carbide Discrete Devices market is segmented by Type and by Application. Players, stakeholders, and other participants in the global Silicon Carbide Discrete Devices market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on production capacity, revenue and forecast by Type and by Application for the period 2017-2028.
Segment by Type
SiC MOSFET
SiC Diode
SIC Module
Segment by Application
Lighting Control
Industrial Motor Drive
Flame Detector
EV Motor Drive
EV Charging
Electronic Combat System
Wind Energy
Solar Energy
Others
By Company
Infineon Technologies AG
Cree Inc. (Wolfspeed)
Rohm Semiconductor
Stmicroelectronics N.V.
Fuji Electric Co., Ltd.
On Semiconductor
General Electric
United Silicon Carbide, Inc.
Genesic Semiconductor Inc.
Renesas Electronics Corporation
Monolith Semiconductor Inc.
Ascatron AB
Pilegrowth Tech S.R.L.
Production by Region
North America
Europe
China
Japan
Consumption by Region
North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Indonesia
Thailand
Malaysia
Philippines
Vietnam
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE
